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| LESHAN RADIO COMPANY, LTD. Dual Serise Switching Diodes Features LBAV99WT1 LBAV99RWT1 3 * Pb-Free Package May be Available. The G-Suffix Denotes a Pb-Free Lead Finish The LBAV99WT1 is a smaller package, equivalent to the LBAV99LT1. Suggested Applications * ESD Protection * Polarity Reversal Protection * Data Line Protection * Inductive Load Protection * Steering Logic ORDERING INFORMATION Device LBAV99WT1G LBAV99RWT1G LBAV99WT1 LBAV99RWT1 Package SOT-323(SC-70) SOT-323(SC-70) SOT-323(SC-70) SOT-323(SC-70) Shipping 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel CATHODE 1 1 1 2 LBAV99WT1 SOT-323 (SC-70) LBAV99RWT1 SOT-323 (SC-70) ANODE CATHODE 2 3 CATHODE/ANODE LBAV99WT1 ANODE 2 3 CATHODE/ANODE DEVICE MARKING LBAV99WT1 = A7; LBAV99RWT1 = F7 LBAV99RWT1 MAXIMUM RATINGS (Each Diode) Rating Reverse Voltag Forward Current Peak Forward Surge Current Repetitive Peak Reverse Voltage Average Rectified Forward Current (Note 1.) (averaged over any 20 ms period) Repetitive Peak Forward Current Non-Repetitive Peak Forward Current t = 1.0 s t = 1.0 ms t = 1.0 S 1. FR-5 = 1.0 x 0.75 x 0.062 in. Symbol VR IF IFM(surge) VRRM IF(AV) Value 70 215 500 70 715 Unit Vdc mAdc mAdc V mA IFRM IFSM 450 2.0 1.0 0.5 mA A LBAV99WT1 LBAV99RWT1-1/3 LESHAN RADIO COMPANY, LTD. LBAV99WT1 LBAV99RWT1 THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR-5 Board, (Note 1.) TA = 25C Derate above 25C Thermal Resistance Junction to Ambient Total Device Dissipation Alumina Substrate, (Note 2.) TA = 25C Derate above 25C Thermal Resistance Junction to Ambient Junction and Storage Temperature Characteristic Symbol PD Max 200 1.6 RJA PD 625 300 2.4 417 -65 to +150 Min Unit mW mW/C C/W mW mW/C C/W C Max Unit RJA TJ,T stg Symbol ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Each Diode) OFF CHARACTERISTICS Reverse Breakdown Voltage Reverse Voltage Leakage Current (I(BR) = 100 A) (VR = 70 Vdc) (VR = 25 Vdc, TJ = 150C) (VR = 70 Vdc, TJ = 150C) V(BR) IR 70 -- -- -- -- -- -- -- -- -- -- -- 2.5 30 50 1.5 715 855 1000 1250 6.0 1.75 Vdc Adc Diode Capacitance (VR = 0, f = 1.0 MHz) Forward Voltage CD (IF = 1.0 mAdc) (IF = 10 mAdc) (IF = 50 mAdc) (IF = 150 mAdc) VF pF mVdc Reverse Recovery Time RL = 100 (IF=IR=10 mAdc, iR(REC)=1.0mAdc) (Figure 1) Forward Recovery Voltage (IF = 10 mA, t r = 20 ns) 1. FR-5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. trr VFR ns V +10 V 820 2.0 k 0.1F tr tp 10% t IF t rr t 100 H IF 0.1 F 50 OUTPUT PULSE GENERATOR D.U.T. 50 INPUT SAMPLING OSCILLOSCOPE 90% V R INPUT SIGNAL IR i R(REC) = 1.0 mA OUTPUT PULSE (I F = I R = 10 mA; MEASURED at i R(REC) = 1.0 mA) Notes: 1. A 2.0 k variable resistor adjusted for a Forward Current (I F ) of 10mA. Notes: 2. Input pulse is adjusted so I R(peak) is equal to 10mA. Notes: 3. t p t rr Figure 1. Recovery Time Equivalent Test Circuit LBAV99WT1 LBAV99RWT1-2/3 LESHAN RADIO COMPANY, LTD. LBAV99WT1 LBAV99RWT1 100 10 IF , FORWARD CURRENT (mA) IR , REVERSE CURRENT (A) 1.0 10 0.1 1.0 0.01 0.1 0.2 0.4 0.6 0.8 1.0 1.2 0.001 0 10 20 30 40 50 VF , FORWARD VOLTAGE (VOLTS) VR , REVERSE VOLTAGE (VOLTS) Figure 2. Forward Voltage Figure 3. Leakage Current 0.68 CD DIODE CAPACITANCE (pF) 0.64 0.60 0.56 0.52 0 2 4 6 8 VR , REVERSE VOLTAGE (VOLTS) Figure 4. Capacitance LBAV99WT1 LBAV99RWT1-3/3 |
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